Thanh, N. T. Chun, M. G. Ha, N. D. Kim, K. Y. Kim, C. O. Kim, C. G. 2024-01-21T02:06:35Z 2024-01-21T02:06:35Z 2021-09-01 2006-10 0304-8853 https://pubs.kist.re.kr/handle/201004/135082 Planar Hall Effect (PHE) in NiFe(t)/IrMn(10.0 nm) thin film structures has been experimentally investigated as a function of NiFe thickness in the range from 3 to 20 rim, under the applied magnetic field perpendicular to the easy axis. The PHE voltage change and its field sensitivity increase with NiFe thickness, but the field interval of two voltage maxima decreases with the thickness. There are good agreements between measured and calculated PHE voltage profiles, where the parameters of exchange-biased and effective anisotropy fields have been characterized to decrease with NiFe thickness. However, an anisotropic resistivity change increases as the NiFe thickness increases. These analyses suggest that PHE is the effective method, inferred to single domain, to determine the electrical and magnetic parameters in magnetic devices. (C) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV CO/COO BILAYERS FILMS BIAS MAGNETORESISTANCE Thickness dependence of exchange anisotropy in NiFe/IrMn bilayers studied by Planar Hall Effect Article 10.1016/j.jmmm.2006.01.228 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.305, no.2, pp.432 - 435 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 305 2 432 435 scie scopus 000240831600028 2-s2.0-33747782880 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article CO/COO BILAYERS FILMS BIAS MAGNETORESISTANCE Planar Hall effect AMR exchange biased-coupling