Lee, J. I. Nam, H. D. Choi, W. J. Yu, B. Y. Song, J. D. Hong, S. C. Noh, S. K. Chovet, A. 2024-01-21T02:06:43Z 2024-01-21T02:06:43Z 2021-09-01 2006-10 1567-1739 https://pubs.kist.re.kr/handle/201004/135088 Current-voltage and low frequency excess electrical noise characteristics of two different-Schottky diode and n-i-n diode-GaAs structures embedded with self-assembled In(Ga)AS quantum dots are reported. We find the growth of quantum dots induces defects not only near the quantum dot but also extended to quite a distance toward the growth direction. In Schottky diode structure, comparing with the reference sample without the quantum dot layer, the current dependence of the low frequency noise spectral density indicated that the noise is from the generated interface states with the density increasing towards the band tail. Also the crystal quality of the Schottky diode including the quantum dot layer, deduced from the Hooge parameter, was slightly worse than that of the reference sample. For n-i-n diode structure, the current-voltage relation was linear, and a quadratic current dependence of the noise spectral density was observed. The Hooge parameter for the n-i-n structure was determined to be on the order of unity indicating the general degradation of the structure. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV SCHOTTKY-BARRIER DIODES LAYER EPITAXY TECHNIQUE 1/F NOISE INFRARED PHOTODETECTOR FLICKER NOISE DEVICES Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots Article 10.1016/j.cap.2005.07.012 1 CURRENT APPLIED PHYSICS, v.6, no.6, pp.1024 - 1029 CURRENT APPLIED PHYSICS 6 6 1024 1029 scie scopus kci other ART001028266 000239986300012 2-s2.0-33746298950 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper SCHOTTKY-BARRIER DIODES LAYER EPITAXY TECHNIQUE 1/F NOISE INFRARED PHOTODETECTOR FLICKER NOISE DEVICES InGaAs GaAs quantum dots low frequency noise interface states random walk of electrons Schottky barrier