Park, Yu Jin Lee, Jeong Yong Kim, Yong Tae 2024-01-21T02:30:35Z 2024-01-21T02:30:35Z 2021-09-01 2006-09-30 0169-4332 https://pubs.kist.re.kr/handle/201004/135100 The nucleation and grain growth of the Ge2Sb2Te5 (GST) thin films were studied using high voltage electron microscope operated at 1250 kV. As a result, we have found that 2 nm-sized nucleus forms as a cluster which atoms are arranged regularly at the stage of nucleation prior to the formation of grains having crystal structure. The high-resolution transmission electron microscopy study and fast-Fourier transformations revealed that coexistence of face-centered-cubic (FCC) and hexagonal structure occurs, and formation of twin defect is found in the hexagonal structure during the grain growth as the annealing temperature is increased. GST grain having the hexagonal structure grow from the surface, and the growth proceeded perpendicular to the [0 0 0 1], namely the path parallel to the (0 0 0 1) plane. Consequently, grain growth to a large-scale result in a lengthened shape. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV METASTABLE GE2SB2TE5 CRYSTAL-STRUCTURE DIFFRACTION PHASE RESISTANCE MEMORY In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films Article 10.1016/j.apsusc.2005.10.026 1 APPLIED SURFACE SCIENCE, v.252, no.23, pp.8102 - 8106 APPLIED SURFACE SCIENCE 252 23 8102 8106 scie scopus 000241050300014 2-s2.0-33748170599 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article METASTABLE GE2SB2TE5 CRYSTAL-STRUCTURE DIFFRACTION PHASE RESISTANCE MEMORY Ge2Sb2Te5 transmission electron microscopy nucleation grain growth