No, Y. S. Kim, T. W. Jung, Y. S. Choi, W. K. 2024-01-21T02:30:37Z 2024-01-21T02:30:37Z 2021-09-01 2006-09-30 0169-4332 https://pubs.kist.re.kr/handle/201004/135101 ZnO active layers on ZnO buffer layers were grown at various O-2/O-2 + At flow-rate ratios by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the surface roughnesses of the ZnO active layers grown on ZnO buffer layers decreased with decreasing O-2 atmosphere, indicative of an improvement in the ZnO surfaces. The type of the ZnO active layer was n-type, and the resistivity of the layer increased with increasing O-2 atmosphere. Photoluminescence spectra from the ZnO active layers grown on the ZnO buffer layers showed dominant peaks corresponding to local levels in the ZnO energy gap resulting from oxygen vacancies or interstitial zinc vacancies, and the peak positions changed significantly with the O-2/O-2 + At flow rate. These results can help improve understanding of the dependences of the surface and the optical properties on the 040, + At ratio for ZnO thin films grown on ZnO buffer layers. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SAPPHIRE PHOTOLUMINESCENCE MECHANISMS SILICON Dependences of the surface and the optical properties on the O-2/O-2+Ar flow-rate ratios for ZnO thin films grown on ZnO buffer layers Article 10.1016/j.apsusc.2005.10.030 1 APPLIED SURFACE SCIENCE, v.252, no.23, pp.8121 - 8125 APPLIED SURFACE SCIENCE 252 23 8121 8125 scie scopus 000241050300017 2-s2.0-33748184288 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article SAPPHIRE PHOTOLUMINESCENCE MECHANISMS SILICON ZnO thin film surface property optical property