Kim, YK Park, YK Kim, JK Kim, SW Ju, BK 2024-01-21T02:32:31Z 2024-01-21T02:32:31Z 2021-09-02 2006-09 1099-0062 https://pubs.kist.re.kr/handle/201004/135180 In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon wafer. Then, bottom-up gold electroplating was applied to fill via holes. For hermetic sealing, gold-gold direct metal bonding was used in the sealing line. The packaged rf device has a reflection loss below -22 dB and an insertion loss of -0.05 to -0.08 dB. Therefore, with the ultrathin silicon wafer, a lightweight, small device package can be constructed. English ELECTROCHEMICAL SOC INC Ultrathin silicon micropackaging for RF MEMS devices Article 10.1149/1.2150166 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.2, pp.G44 - G48 ELECTROCHEMICAL AND SOLID STATE LETTERS 9 2 G44 G48 scie scopus 000234142000035 2-s2.0-33645523279 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article ultrathin micropackaging mems