Wang, Aiying Lee, Kwangryeol Sun, Chao Wen, Lishi 2024-01-21T02:32:39Z 2024-01-21T02:32:39Z 2021-09-01 2006-09 1005-0302 https://pubs.kist.re.kr/handle/201004/135185 During the growth of the hot filament chemical vapor deposition (HFCVD) diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on the gas physical parameters, including the temperature, velocity and volume density of gas. It was found that, even in the case of optimized deposition parameters, the space distributions of gas parameters were heterogeneous due primarily to the thermal blockage come from the hot filaments and cryogenic pump effect arisen from the cold reactor wall. The distribution of volume density agreed well with the. thermal round-flow phenomenon, one of the key obstacles to obtaining high growth rate in HFCVD process. In virtue of isothermal boundary with high temperature or adiabatic boundary condition of reactor wall, however, the thermal round-flow was profoundly reduced and as a consequence, the uniformity of gas physical parameters was considerably improved, as identified by the experimental films growth. English JOURNAL MATER SCI TECHNOL TEMPERATURE-DEPENDENCE SUBSTRATE-TEMPERATURE HEAT-TRANSFER LARGE-AREA GROWTH Simulations of the dependence of gas physical parameters on deposition variables during HFCVD diamond films Article 1 JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, v.22, no.5, pp.599 - 604 JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 22 5 599 604 scie scopus 000241099400006 2-s2.0-33751220226 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article TEMPERATURE-DEPENDENCE SUBSTRATE-TEMPERATURE HEAT-TRANSFER LARGE-AREA GROWTH gas physical parameters simulations diamond films HFCVD