Chun, S. H. Yu, J. P. Kim, Y. S. Choi, H. K. Bak, J. H. Park, Y. D. Khim, Z. G. 2024-01-21T02:32:43Z 2024-01-21T02:32:43Z 2021-09-01 2006-09 0304-8853 https://pubs.kist.re.kr/handle/201004/135188 We have studied the effect of barrier strength on the tunneling magnetoresistance of MnAs/GaMnAs heterostructures with double AlAs barriers. The epitaxial structures were grown by low-temperature molecular beam epitaxy. The vertical magnetotransport properties were studied for various GaAs spacer thicknesses. We find that the junction resistivities of double barrier samples increase exponentially as the barrier strength increases, implying that direct tunneling process governs the transport properties. In contrast, the tunneling magnetoresistance depends primarily on the number of interfaces rather than on the barrier strength. (C) 2006 Elsevier B. V. All rights reserved. English ELSEVIER INJECTION Vertical spin transport in MnAs/GaMnAs heterostructures Article 10.1016/j.jmmm.2006.02.048 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.304, no.1, pp.E337 - E339 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 304 1 E337 E339 scie scopus 000207211700111 2-s2.0-33646886145 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article INJECTION GaMnAs MnAs Heterostructures Spin injection Double tunnel junction