Do Kim, Yang Kim, Eun Kyu Lee, Soojin Cho, Woon Jo 2024-01-21T02:33:09Z 2024-01-21T02:33:09Z 2021-09-01 2006-09 0374-4884 https://pubs.kist.re.kr/handle/201004/135206 A floating gated quantum dot memory using threshold shifting from charges stored in nanoparticles of silicon is expected to be promising candidate for future nonvolatile memory devices. Silicon nanoparticles of 1 similar to 5 nm in diameter embedded in SiO2 thin films were made by using an ultrasound induced solution method. SiO2 layers were deposited by RF magnetron sputtering in pure Ar gas. The substrate temperatures was changed from room temperature to 200 degrees C under the same deposition conditions. From the capacitance-valtage measurements of metal-oxide-semiconductor capacitors fabricated with the Si nanopaticles in the SiO2 layer, the flat-band voltages changed by about 4.8 V due to charging and discharging to the nanoparticles. English KOREAN PHYSICAL SOC Electrical characterization of Si nanoparticles embedded in SiO2 thin films Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.1192 - 1195 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3 1192 1195 scie scopus kci ART001025188 000240570400072 2-s2.0-33749866072 Physics, Multidisciplinary Physics Article Si/SiO2 nanoparticles C-V non-volatile memory nano-floating gate memory