Kim, Kwang Woong Song, Jin Dong Choi, Won Jun Lee, Jung Il Park, Jung He 2024-01-21T02:33:15Z 2024-01-21T02:33:15Z 2021-09-01 2006-09 0374-4884 https://pubs.kist.re.kr/handle/201004/135210 We have investigated the effects of an AlxGa1-xAs cladding layer on the performance of In0.2Ga0.8As/GaAs single quantum well (SQW) laser diodes (LDs). Two types of SQW-LDs with different cladding layers are grown by molecular beam epitaxy. One has 1-mm-thick Al0.3Ga0.7As cladding layers for both the top and the bottom cladding layers and the other has 1-mm-thick Al0.7Ga0.3As cladding layers. The SQW-LDs are fabricated to a ridge waveguide structure with a 50-mm-wide, 750-mm-long cavity. Under a pulsed operation, the threshold current density (J(th)) and the characteristic temperature (T-0) are 770 A/cm(2) and 33.5 K for a SQW-LD with Al0.3Ga0.7As cladding and 300 A/cm(2) and 70 K for one with Al0.7Ga0.3As cladding, respectively, at room-temperature (RT). This result can be explained by the increased optical confinement and the improved carrier confinement caused by introducing a high Al content into AlxGa1-xAs cladding layer. English KOREAN PHYSICAL SOC CHEMICAL-VAPOR-DEPOSITION HIGH-POWER IMPROVEMENT Enhanced performance of an InGaAs/GaAs single quantum well laser diode by introducing a high Al-content AlxGa1-xAs cladding layer Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.1169 - 1172 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3 1169 1172 scie scopus kci ART001025186 000240570400068 2-s2.0-33749818829 Physics, Multidisciplinary Physics Article CHEMICAL-VAPOR-DEPOSITION HIGH-POWER IMPROVEMENT quantum well laser diode cladding layer optical confinement carrier confinement