Park, Ik Hyun Min, Su Ryun Park, Wang Hyun Shin, Kyung Ho Chung, Chee Won 2024-01-21T02:33:16Z 2024-01-21T02:33:16Z 2021-09-01 2006-09 0304-8853 https://pubs.kist.re.kr/handle/201004/135211 High-density plasma reactive ion etching of MTJ stack was investigated in an inductively coupled plasma of Cl-2/Ar and Cl-2/O-2/Ar gas mixes. Thin TiN hard mask was employed and the etching proceeded at ambient temperature. The effect of etch gas on the etch profiles of MTJ stack was examined by varying the gas concentration. In addition, the effects of etch parameters on the etch profiles and magnetic properties of MTJ stacks were investigated. The highly anisotropic etching of MTJ stack arrays with 200 x 200 and 100 x 100 nm(2) dimensions was successfully achieved. (C) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV Nanometer-sized etching of magnetic tunnel junction stack for magnetic random access memory Article 10.1016/j.jmmm.2006.01.130 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.304, no.1, pp.E264 - E266 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 304 1 E264 E266 scie scopus 000207211700087 2-s2.0-33646862825 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article MRAM Magnetic tunnel junction Inductively coupled plasma reactive ion etching