Kim, Woochul Kang, Hee Jae Oh, Suhk Kun Cho, Yong Hun Yang, Ddong Suk Noh, Sam Kyu Oh, Sang Jun 2024-01-21T02:33:21Z 2024-01-21T02:33:21Z 2021-09-01 2006-09 0374-4884 https://pubs.kist.re.kr/handle/201004/135215 Co- ions of 80 keV at a dose of 3 x 10(16) cm(-2) were implanted in single-crystal ZnO (0001) substrates at 350 degrees C and subsequently annealed at 700 - 900 degrees C. The properties of Co-ion-implanted ZnO were investigated by using various measurements. X-ray diffraction results showed the presence of Co impurities in the samples annealed at 700 - 900 degrees C. The Co K-edge X-ray absorption near-edge structure and extended X-ray absorption fine structure revealed the coexistence of Co-O and Co-Co bonds in the films. The magnetization curves and the temperature dependence of magnetization taken in zero-field-cooling (ZFC) and field-cooling (FC) conditions showed the features of a superparamagnetic system due to the presence of magnetic clusters. The blocking temperature (T-B) increased with increasing annealing temperature. In the PL spectra obtained at 10 K, noticeable difference in the near-band-edge and the green-band photoluminescences between unimplanted and implanted ZnO films with post-annealing were observed. English KOREAN PHYSICAL SOC MN-DOPED ZNO TIO2 THIN-FILMS FERROMAGNETISM SEMICONDUCTORS PHOTOLUMINESCENCE ZN1-XCOXO SAMPLES Influence of high temperature annealing on the magnetic and the structural properties of co ion-implanted-ZnO single crystals Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.979 - 984 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3 979 984 scie scopus kci ART001032911 000240570400028 2-s2.0-33749829349 Physics, Multidisciplinary Physics Article MN-DOPED ZNO TIO2 THIN-FILMS FERROMAGNETISM SEMICONDUCTORS PHOTOLUMINESCENCE ZN1-XCOXO SAMPLES magnetic semiconductor ion implantation