Oh, Eunsoon Choi, Jung Ho Seong, Han-Kyu Choi, Heon-Jin 2024-01-21T02:33:47Z 2024-01-21T02:33:47Z 2021-08-31 2006-08-28 0003-6951 https://pubs.kist.re.kr/handle/201004/135232 The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires. (c) 2006 American Institute of Physics. English AMER INST PHYSICS PHOTOLUMINESCENCE FERROMAGNETISM SEMICONDUCTOR LUMINESCENCE DEPENDENCE ACCEPTOR Optical properties of GaN and GaMnN nanowires grown on sapphire substrates Article 10.1063/1.2243868 1 APPLIED PHYSICS LETTERS, v.89, no.9 APPLIED PHYSICS LETTERS 89 9 scie scopus 000240236600057 Physics, Applied Physics Article PHOTOLUMINESCENCE FERROMAGNETISM SEMICONDUCTOR LUMINESCENCE DEPENDENCE ACCEPTOR GaN nanowires Optical propertiy