Kim, Jin Soak Kim, Eun Kyu Han, Il Ki Song, Jin Dong Lee, Jung Il Lee, Sejoon Shon, Yoon Kim, D. Y. 2024-01-21T02:35:12Z 2024-01-21T02:35:12Z 2021-09-01 2006-08 0268-1242 https://pubs.kist.re.kr/handle/201004/135291 We have investigated the defect states and confined energy levels of three quantum wells (QWs) in the quantum cascade laser (QCL) structure by capacitance-voltage and deep-level transient spectroscopy methods. Defect states with activation energies in the range of 0.49-0.88 eV were obtained in the GaAs capping layer, and their origins were considered as EL3 and EL2 families, which are well-known deep levels of GaAs materials. The densities of these defects in the GaAs capping layer of the QCL structure were about 3-12% of the donor concentration. The confined energy levels of QWs showed activation energies of about 130 meV and 230 meV from the top of the AlGaAs barrier, and their carrier confinement ability was measured to be about 0.5% of the donor concentration. English IOP PUBLISHING LTD ROOM-TEMPERATURE MU-M POWER GAAS A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy Article 10.1088/0268-1242/21/8/015 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.8, pp.1069 - 1072 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21 8 1069 1072 scie scopus 000240123100016 2-s2.0-33749063841 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article ROOM-TEMPERATURE MU-M POWER GAAS quantum cascade laser DLTS energy bands