Lim, J. Y. Nam, H. D. Song, J. D. Choi, W. J. Lee, J. I. Yang, H. S. 2024-01-21T02:35:37Z 2024-01-21T02:35:37Z 2021-09-01 2006-08 1567-1739 https://pubs.kist.re.kr/handle/201004/135308 We report the modification of the characteristics of quantum dot infrared photodetectors (QDIPs) by thermal treatment and hydrogen plasma (H-plasma) treatment. H-plasma treatment on the QDIP induced structural change in 3-stacked In0.5Ga0.5As quantum dots (QDs) active region, resulting in bi-modal type two photoluminescence peaks. H-plasma treated QDIP showed a blue-shift of photocurrent spectrum by 110 meV with an increase of operation temperature from 50 to 130 K, which is attributed to relatively thermally stable intersubband transition from larger QDs. Thermal treatment of QDIP structure at 700 degrees C for 1 min with SiO2 capping layer induced intermixing of In and Ga atoms in QDs, resulting in a blue-shift of PL spectrum by 48 meV. Thermally treated QDIP showed a red-shift of photocurrent spectrum by 22 meV as a result of bandgap change with intermixing. (C) 2006 Elsevier B.V. All rights reserved. English ELSEVIER LUMINESCENCE PHOTOLUMINESCENCE PASSIVATION TEMPERATURE Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes Article 10.1016/j.cap.2006.01.007 1 CURRENT APPLIED PHYSICS, v.6, pp.E33 - E37 CURRENT APPLIED PHYSICS 6 E33 E37 scie scopus kci other ART001020890 000209752200008 2-s2.0-33746257272 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article LUMINESCENCE PHOTOLUMINESCENCE PASSIVATION TEMPERATURE Quantum dot Infrared photodetector Dot in an asymmetric well structure