Jung, Mi Lee, Hong Seok Park, Hong Lee Mho, Sun-il 2024-01-21T02:35:50Z 2024-01-21T02:35:50Z 2021-08-31 2006-08 1567-1739 https://pubs.kist.re.kr/handle/201004/135316 Long-range ordered semiconductor CdTe nanodot arrays of the uniform size were formed by molecular-beam epitaxy on the GaAs substrate as a replica of the nanoporous alumina mask in spite of the large lattice mismatch between GaAs and CdTe. The number per unit area and the size of nanodots of the heterostructure semiconductor CdTe/GaAs were controlled by those of pores in the mask. Using a very thin nanoporous alumina mask (<200 nm thick) prepared at the anodization voltage of 30 V in oxalic acid, fabricated were the arrays of CdTe nanodots (55 nm diameter) with the large number per unit area of 1.3 x 10(10) cm(-2). (C) 2006 Published by Elsevier B.V. English ELSEVIER SCIENCE BV Fabrication of high density CdTe/GaAs nanodot arrays using nanoporous alumina masks Article 10.1016/j.cap.2006.01.036 1 CURRENT APPLIED PHYSICS, v.6, pp.E187 - E191 CURRENT APPLIED PHYSICS 6 E187 E191 scie scopus kci other 000209752200037 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article Nanoporous alumina mask CdTe nanodot arrays Molecular beam epitaxy