Kim, Hyun-Suk Hyun, Tae-Seon Kim, Ho-Gi Kim, Il-Doo Yun, Tae-Soon Lee, Jong-Chul 2024-01-21T02:35:52Z 2024-01-21T02:35:52Z 2021-09-01 2006-07-31 0003-6951 https://pubs.kist.re.kr/handle/201004/135317 The effect of texture with (100) and (110) preferred orientations on dielectric properties of Ba0.6Sr0.4TiO3 (BST) thin films grown on SrO (9 nm) and CeO2 (70 nm) buffered Si substrates, respectively, was investigated. The coplanar waveguide (CPW) phase shifter using (100) oriented BST films on SrO buffered Si exhibited a much-enhanced figure of merit of 24.7 degrees/dB, as compared to that (10.2 degrees/dB) of a CPW phase shifter using (110) oriented BST films on CeO2 buffered Si at 12 GHz. This work demonstrates that the microwave properties of the Si-integrated BST thin films are highly correlated with crystal orientation. (c) 2006 American Institute of Physics. English AMER INST PHYSICS SILICON TA2O5 Orientation effect on microwave dielectric properties of Si-integrated Ba0.6Sr0.4TiO3 thin films for frequency agile devices Article 10.1063/1.2236099 1 APPLIED PHYSICS LETTERS, v.89, no.5 APPLIED PHYSICS LETTERS 89 5 scie scopus 000239520200069 2-s2.0-33748467174 Physics, Applied Physics Article SILICON TA2O5