Park, Jae-Wan Park, Jong-Wan Yang, Min Kyu Jung, Kyooho Kim, Dal-Young Lee, Jeon-Kook 2024-01-21T03:00:36Z 2024-01-21T03:00:36Z 2021-09-01 2006-07 0734-2101 https://pubs.kist.re.kr/handle/201004/135364 A polycrystalline Cr-doped SrZrO(3)/SrRuO(3) layered structure showing a reproducible resistive switching behavior with a resistive switching voltage of +/- 2.5 V was successfully fabricated on commercial Si (100) substrate by off-axis rf sputtering. Typical resistance values of high- and low-resistance states were about 100 and 5 k Omega, respectively, so that the ratio of high- to low-resistance value is about 20. These values are appropriate for memory applications, and the resistive switching voltage of +/- 2.5 V is the lowest value among the switching voltages of Cr-doped SrZrO(3) films on Si substrates reported in recent literature. We suggest that the low-voltage resistive switching of the polycrystalline Cr-doped SrZrO(3) thin film is attributed to the reduction of resputtering effects and the formation of a clean interface between the Cr-doped SrZrO(3) thin film and the SrRuO(3) bottom electrode layer by the use of 90 degrees off-axis sputtering. (c) 2006 American Vacuum Society. English A V S AMER INST PHYSICS MEMORY APPLICATIONS OXIDE-FILMS RESISTANCE Low-voltage resistive switching of polycrystalline SrZrO(3): Cr thin films grown on Si substrates by off-axis rf sputtering Article 10.1116/1.2202126 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.24, no.4, pp.970 - 973 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 24 4 970 973 scie scopus 000239048100014 2-s2.0-33745495242 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article MEMORY APPLICATIONS OXIDE-FILMS RESISTANCE Resistive switching polycrystalline SrZrO3 Cr doping off-axis rf sputtering Si substrate