Seo, J. H. Park, J. Y. Whang, C. N. Yoo, K. -H. Kim, S. S. Choi, D. S. Chae, K. H. 2024-01-21T03:00:53Z 2024-01-21T03:00:53Z 2021-09-01 2006-07 0374-4884 https://pubs.kist.re.kr/handle/201004/135375 A one-dimensional (1-D) ordered structure of ethylene (C2H4) molecules on a Si(001) surface has been investigated by using coaxial impact collision ion scattering spectroscopy (CAICISS) and computer simulations. In a previous paper, the di-sigma on-top site of the Si(001)-(2 x 1) surface was exposed at room temperature (RT) to 1001, (IL = 10(-6) Torr.sec)of C2H4 molecules, which were intially absorbed on that surface. With increasing number of C2H4 molecules, a structural change of C2H4/Si(001)-(2 x 1) surface was observed by using the low-energy electron diffraction (LEED). When the Si(001)-(2 x 1) surface at RT to 2001, of C2H4 molecules, the C2H4 molecules occupied the di-sigma on-top site on the Si(001)-(2 x 1) surface. With the help of a computer simulation, the C-C and Si-C bond lengths were found to be 1.61 +/- 0.05 angstrom and 1.81 +/- 0.05 angstrom respectively. The C2H4 molecules were also found to be adsorbed on the Si(001) surface on in tandem along the direction of Si dimer-rows. This result provides evidence supporting the mechanism of 1-D nano-structure formation based on the C2H4 molecules on Si(001) surface. English KOREAN PHYSICAL SOC ATOMIC-STRUCTURE ADSORPTION One-dimensional ordered structure of C2H4 on a Si(001) surface Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.1, pp.167 - 171 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 1 167 171 scie scopus kci ART001017867 000239073100027 2-s2.0-33747074368 Physics, Multidisciplinary Physics Article ATOMIC-STRUCTURE ADSORPTION adsorption surface structure silicon ethylene low energy ion scattering (LEIS) low-energy electron diffraction (LEED)