Lee, Jooyoung Kim, Hyungjun Bao, Mingqiang Wang, Kang L. 2024-01-21T03:01:43Z 2024-01-21T03:01:43Z 2021-08-31 2006-06-05 0040-6090 https://pubs.kist.re.kr/handle/201004/135407 Pattern size dependence of etch pit dislocations (EPDs), strain relaxation and Hall mobility has been investigated in Si0.62Ge0.38 alloy layers grown on a patterned Si template with different sizes of trench openings isolated by oxide. The results show that the EPD density is significantly reduced from 24000 to 6400 cm(-2) as the pattern size decreases from 500 x 500 to 10 x 10 mu m(2). The Hall mobility is also greatly enhanced as the pattern size decreases, particularly at low temperature. These results represent that the dislocation and surface roughness are dominant limiting factors of the mobility in the SiGe epitaxial layers. The dislocations are effectively reduced and the smoother surface roughness is achieved using the pattern guided epitaxy. The nano-scaled pattern guided epitaxial growth may provide a promising method for future high mobility and low dimensional device applications. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA MISFIT DISLOCATION DENSITY SCATTERING HETEROSTRUCTURES MECHANISMS REDUCTION STRAIN Pattern size dependence of Si1-xGex epitaxial growth for high mobility device applications Article 10.1016/j.tsf.2005.07.358 1 THIN SOLID FILMS, v.508, no.1-2, pp.10 - 13 THIN SOLID FILMS 508 1-2 10 13 scie scopus 000237460100004 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper MISFIT DISLOCATION DENSITY SCATTERING HETEROSTRUCTURES MECHANISMS REDUCTION STRAIN Molecular Beam Epitaxy (MBE) Etch Pit Dislocations (EPDs) nanoepitaxy size dependent Hall mobility