Zhao, Z. M. Yoon, T. S. Feng, W. Li, B. Y. Kim, J. H. Liu, J. Hulko, O. Xie, Y. H. Kim, H. M. Kim, K. B. Kim, H. J. Wang, K. L. Ratsch, C. Caflisch, R. Ryu, D. Y. Russell, T. P. 2024-01-21T03:01:44Z 2024-01-21T03:01:44Z 2021-08-31 2006-06-05 0040-6090 https://pubs.kist.re.kr/handle/201004/135408 The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA SI(001) ISLANDS SURFACE GROWTH ARRAYS The challenges in guided self-assembly of Ge and InAs quantum dots on Si Article 10.1016/j.tsf.2005.08.407 1 THIN SOLID FILMS, v.508, no.1-2, pp.195 - 199 THIN SOLID FILMS 508 1-2 195 199 scie scopus 000237460100049 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper SI(001) ISLANDS SURFACE GROWTH ARRAYS Ge InAs quantum dots self-assembly