이홍찬 최원국 심광보 오영제 2024-01-21T03:03:04Z 2024-01-21T03:03:04Z 2021-09-06 2006-06 1225-5475 https://pubs.kist.re.kr/handle/201004/135463 ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure (35~350mtorr) conditions. The Arsenic-doped (1, 3wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The -2 XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films. 한국센서학회 Hetero-epitaxial ZnO 버퍼층이 As-doped ZnO 박막의증착조건에 미치는 영향 Effect of the hetero-epitaxial ZnO buffer layer for theformation of As-doped ZnO thin films Article 2 센서학회지, v.15, no.3, pp.216 - 221 센서학회지 15 3 216 221 kci ART001147382 ZnO thin film pulsed laser deposition molecular beam epitaxy buffer layer photoluminesence microstructure