Lee, Min Seung Kim, Jae Hoon Kim, Eun Kyu Kim, Won Mok 2024-01-21T03:03:18Z 2024-01-21T03:03:18Z 2021-09-01 2006-06 0374-4884 https://pubs.kist.re.kr/handle/201004/135473 It has been shown that metal nano-particles dispersed in a dielectric layer can be used in nanodevices such as a single electron tunneling transistors and nano-floating gate memories. In this study, we prepared nano-floating gate capacitors by forming Au nano-particles, which were sandwiched between either SiON or SiO2 dielectric layers and we analyzed their electrical characteristics. The SiO2 layers and the Au nano-particles were deposited by RF magnetron sputtering in pure an Ar gas, and SiON layers were deposited in a reactive mode under Ar and N-2 gas mixture. Then, the depositions were carried out at substrate temperature of 300 degrees C and in working pressure of 5 mTorr. The nominal thicknesses of the Au nano-particle were 0.5, 1, and 3 nm and next corresponding average An particle sizes obtained from transmission electron microscopy (TEM) were 3, 4 and 10 nm, respectively. English KOREAN PHYSICAL SOC SILICON MEMORY OXIDATION STORAGE FILMS Electrical charging property of Au nano-particles in a SiON dielectric layer Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1552 - 1555 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 48 6 1552 1555 scie scopus kci 000238324000080 2-s2.0-33746103664 Physics, Multidisciplinary Physics Article; Proceedings Paper SILICON MEMORY OXIDATION STORAGE FILMS nano-particle Au/SiON non-volatile memory nano-floating gate memory