Jung, S. I. Yeo, H. Y. Yun, I. Leem, J. Y. Han, I. K. Kim, J. S. Lee, J. I. 2024-01-21T03:03:32Z 2024-01-21T03:03:32Z 2021-09-01 2006-06 1386-9477 https://pubs.kist.re.kr/handle/201004/135482 We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM EPITAXY INGAAS ISLANDS GAAS Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots Article 10.1016/j.physe.2006.03.150 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.33, no.1, pp.280 - 283 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 33 1 280 283 scie scopus 000238492500049 2-s2.0-33646909670 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article MOLECULAR-BEAM EPITAXY INGAAS ISLANDS GAAS quantum dots InAs bimodal size distribution photoluminescence