Lim, Jung-Ran Rho, Heesuk Song, J. D. Choi, W. J. Kim, J. M. Lee, Y. T. 2024-01-21T03:03:40Z 2024-01-21T03:03:40Z 2021-09-01 2006-06 0374-4884 https://pubs.kist.re.kr/handle/201004/135488 We report polarized photolurninescence (PL) and Raman scattering from InxGa1-xP quantum wire (QWR) and lateral superlattice structures grown using the lateral composition modulation (LCM) that is formed during the growth of InP/GaP short-period superlattices (SPSs). The QWR structure was fabricated in the presence of LCM by reducing the growth thickness of the SPS layers. Strong anisotropies between the Pl, responses polarized parallel and perpendicular to the elongated direction of LCM were observed both in the lateral superlattice and in the QWR structure. By comparing PL spectra taken at T = 10 K and 300 K, we identified the origin of each PL peak. Raman spectra revealed that a GaP-like longitudinal optical mode in the QWR structure displayed an energy shift of 2 cm(-1) and a broadening of the linewidth compared to that in the lateral superlattice. The energy shift is presumably related to a difference in strain and/or an increase in CuPt-type ordering. An increase in the strain variations in the QWR structure is responsible for the broadening of the linewidth. English KOREAN PHYSICAL SOC Photoluminescence and Raman studies of an ln(x)Ga(1-x)P quantum wire structure fabricated using lateral composition modulation Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1374 - 1378 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 48 6 1374 1378 scie scopus kci ART001012903 000238324000042 2-s2.0-33746082817 Physics, Multidisciplinary Physics Article; Proceedings Paper photoluminescence Raman scattering lateral composition modulation quantum wire