Kim, Soo Ho Ko, Jae Hwan Ji, Seung Hyun Kim, Joo Sun Kang, Sung Sik Lee, Man-Jong Yoon, Young Soo 2024-01-21T03:03:43Z 2024-01-21T03:03:43Z 2021-09-01 2006-06 0021-4922 https://pubs.kist.re.kr/handle/201004/135490 The feasibility of applying ZrO2 center dot Hx thin films is solid electrolytes in solid-state ionic energy systems, such as solid oxide fuel cells and supercapacitors was studied. ZrO2 center dot H-x thin films were deposited on Pt/Ti/SiO2/Si substrates by radio-frequency reactive sputtering with various hydrogen volume fractions in reactive gas. With a variation in hydrogen volume fraction, the surface roughness of the as-deposited films increased. In addition, the structure of the as-deposited films grew in the [I I I] direction with an increase in hydrogen volume fraction. By Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) studies, the Zr/O ratio and hydrogen distribution were evaluated. On the basis of a sample structure of Pt/ZrO2 center dot H-x/Pt/Ti/SiO2/Si for measuring an electrochemical property, an impedance measurement conducted at room temperature revealed an ionic conductivity of 1.67 x 10(-6) S/CM, suggesting that ZrO2 center dot H-x thin films can possibly be used as solid oxide thin film electrolytes in all solid-state ionics power devices requiring a hydrogen conducting electrolyte. English JAPAN SOC APPLIED PHYSICS Structural and electrochemical properties of ZrO2 center dot H-x thin films deposited by reactive sputtering in hydrogen atmosphere as solid electrolytes Article 10.1143/JJAP.45.5144 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.5144 - 5148 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 6A 5144 5148 scie scopus 000238499700053 2-s2.0-33745238923 Physics, Applied Physics Article ionics power devices zirconium oxide thin film solid electrolyte ionic conductivity