Shon, Y Jeon, HC Park, YS Lee, S Kwon, YH Lee, SJ Kim, DY Kim, HS Kang, TW Park, YJ Yoon, CS Kim, CK Kim, EK Kim, Y Woo, YD 2024-01-21T03:04:06Z 2024-01-21T03:04:06Z 2021-09-01 2006-05-18 0040-6090 https://pubs.kist.re.kr/handle/201004/135505 p-type InP:Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP:Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP:Zn epilayer was found, and single-phased lnMnP:Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP:Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 70 K. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA ROOM-TEMPERATURE FERROMAGNETISM MN Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer Article 10.1016/j.tsf.2005.10.026 1 THIN SOLID FILMS, v.505, no.1-2, pp.129 - 132 THIN SOLID FILMS 505 1-2 129 132 scie scopus 000236440600029 2-s2.0-33644891046 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ROOM-TEMPERATURE FERROMAGNETISM MN InMnP : Zn epilayer MOCVD MBE