Lee, CW Kim, YT 2024-01-21T03:05:09Z 2024-01-21T03:05:09Z 2021-09-01 2006-05 1071-1023 https://pubs.kist.re.kr/handle/201004/135549 We deposited W-N thin films on Si and tetraethylorthosilicate (TEOS)/Si substrates at 200-400 degrees C, synchronizing a pulse plasma only with NH3 exposure cycles during atomic layer deposition (ALD) cycles of NH3 and WF6. The deposition rate was about 0.3 nm/cycle at 350 degrees C, the nitrogen concentration was uniformly distributed in the W-N films, and the NH3 pulse plasma did not cause wormholes at the Si surface. However, there was an incubation period to deposit the W-N film according to the ideal ALD mechanism. Rutherford backscattering spectroscopy revealed that a 22-nm-thick W-N thin film, as a diffusion barrier for the Cu interconnect, successfully prevented the Cu diffusion during the annealing at 600 degrees C for 30 min. (c) 2006 American Vacuum Society. English A V S AMER INST PHYSICS FILMS SILICON Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier Article 10.1116/1.2203639 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.3, pp.1432 - 1435 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24 3 1432 1435 scie scopus 000238790000062 2-s2.0-33744816810 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article FILMS SILICON ALD WN