Song, J. D. Choi, W. J. Lee, J. I. Kim, J. M. Chang, K. S. Lee, Y. T. 2024-01-21T03:05:18Z 2024-01-21T03:05:18Z 2021-09-01 2006-05 1386-9477 https://pubs.kist.re.kr/handle/201004/135555 We report successful growth of high-quality InGaAs/InP double quantum wells (DQWs) with safer and more cost-effective decomposition source molecular beam epitaxy (MBE). The transmission electron microscopy (TEM) images and double crystal X-ray diffraction (TCXD) measurement reveal the formation of abrupt interfaces between InGaAs and InP layers. In the case of optical quality, the line width of 12 K-photoluminescence of the DQWs is 8.2 meV, which is comparable to that of single quantum well grown by MBE with PH3 cracker and more complex instrument (similar to 4meV). (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MBE Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources Article 10.1016/j.physe.2005.12.099 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.32, no.1-2, pp.234 - 236 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 32 1-2 234 236 scie scopus 000237842200061 2-s2.0-33646202141 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper MBE MBE arsenic phosphorus InP InGaAs decomposition source compound source multi-quantum wells