Son, S. H. Choi, Y. S. Hwang, S. W. Lee, J. I. Park, Y. J. Yu, Y. S. Ahn, D. 2024-01-21T03:05:30Z 2024-01-21T03:05:30Z 2021-09-01 2006-05 1386-9477 https://pubs.kist.re.kr/handle/201004/135563 We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SINGLE-ELECTRON TRANSISTORS OXIDATION Gate bias controlled NDR in an in-plane-gate quantum dot transistor Article 10.1016/j.physe.2005.12.122 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.32, no.1-2, pp.532 - 535 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 32 1-2 532 535 scie scopus 000237842200135 2-s2.0-33646470695 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper SINGLE-ELECTRON TRANSISTORS OXIDATION quantum dot negative differential resistance single-electron tunneling