Lee, J. C. Chun, M. G. Park, W. H. You, C. -Y. Choe, S. -B. Yung, W. Y. Kim, K. Y. 2024-01-21T03:05:48Z 2024-01-21T03:05:48Z 2021-09-01 2006-04-15 0021-8979 https://pubs.kist.re.kr/handle/201004/135575 We report here the effect of ultrathin IrMn buffer layer on the magnetic and spin transport properties of spintronic structure for current-induced magnetization switching. The insertion of the ultrathin (similar to 1 nm) IrMn buffer layer drastically enhanced the coercive field of the fixed ferromagnetic layer from 36 to 215 Oe. Interestingly, the ultrathin IrMn buffer layer even enhanced the magnetoresistance ratio about 30%, and consequently the spin polarization effect was enhanced by reducing the critical current density of magnetization switching from 3.13x10(8) to 1.16x10(8) A/cm(2). (C) 2006 American Institute of Physics. English AMER INST PHYSICS MULTILAYERS Stability enhancement of nanopillar structure for spin transfer magnetization switching using IrMn buffer layer Article 10.1063/1.2175726 1 JOURNAL OF APPLIED PHYSICS, v.99, no.8 JOURNAL OF APPLIED PHYSICS 99 8 scie scopus 000237404200382 2-s2.0-33646731093 Physics, Applied Physics Article MULTILAYERS