Angadi, B Jung, YS Choi, WK Kumar, R Jeong, K Shin, SW Lee, JH Song, JH Khan, MW Srivastava, JP 2024-01-21T03:06:16Z 2024-01-21T03:06:16Z 2021-09-01 2006-04-03 0003-6951 https://pubs.kist.re.kr/handle/201004/135593 Structural, electrical resistivity, and magnetization properties of 200-MeV Ag+15-ion-irradiated Co-implanted ZnO thin films are presented. The structural studies show the presence of Co clusters whose size is found to increase with increase of Co implantation. The implanted films were irradiated with 200-MeV Ag+15 ions to fluence of 1x10(12) ions/cm(2). The Co clusters on irradiation dissolve in the ZnO matrix. The electrical resistivity of the irradiated samples is lowered to half. The magnetization hysteresis measurements show ferromagnetic behavior at 300 K, and the coercive field increases with the Co implantation. The ferromagnetism at room temperature is confirmed by magnetic force microscopy measurements. The results are explained on the basis of the close interplay between the electrical and the magnetic properties. (c) 2006 American Institute of Physics. English AMER INST PHYSICS DOPED ZNO ROOM-TEMPERATURE Ferromagnetism in 200-MeV Ag+15-ion-irradiated Co-implanted ZnO thin films Article 10.1063/1.2192577 1 APPLIED PHYSICS LETTERS, v.88, no.14 APPLIED PHYSICS LETTERS 88 14 scie scopus 000236612000058 2-s2.0-33646714672 Physics, Applied Physics Article DOPED ZNO ROOM-TEMPERATURE ZnO Ferromagnetism Co-implantation swift heavy ion dilute magnetic semiconductor