Choi, WJ Song, JD Lee, JI Kim, KC Kim, TG 2024-01-21T03:06:17Z 2024-01-21T03:06:17Z 2021-09-01 2006-04-01 0921-4526 https://pubs.kist.re.kr/handle/201004/135594 We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as similar to 50 nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as similar to 82 nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV 1.3 MU-M InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure Article 10.1016/j.physb.2005.12.221 1 PHYSICA B-CONDENSED MATTER, v.376, pp.886 - 889 PHYSICA B-CONDENSED MATTER 376 886 889 scie scopus 000237329500218 2-s2.0-33645154656 Physics, Condensed Matter Physics Article; Proceedings Paper 1.3 MU-M strain relaxation quantum dot dots-in-a-well laser diodes