이홍찬 심광보 오영제 2024-01-21T03:06:38Z 2024-01-21T03:06:38Z 2021-09-06 2006-04 1225-5475 https://pubs.kist.re.kr/handle/201004/135608 Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature(400~700oC) at 350mtorr of oxygen working pressure. Arsenic doped(1wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at 600oC of deposition temperature. 한국센서학회 PLD법을 이용한 Buffer Layer 증착온도에 따른 As-doped ZnO 박막의 특성 Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method Article 2 센서학회지, v.15, no.2, pp.84 - 89 센서학회지 15 2 84 89 kci ART001002955 ZnO thin film buffer layer pulsed laser deposition photoluminesence p-type ZnO