Joo, S Hong, J Rhie, K Jung, KY Kim, KH Kim, SU Lee, BC Park, WH Shin, KH 2024-01-21T03:31:17Z 2024-01-21T03:31:17Z 2021-09-01 2006-04 0374-4884 https://pubs.kist.re.kr/handle/201004/135629 We have obtained a large and quite asymmetric magnetoresistance in a InAs two-dimensional electron gas system in which the shape of the magnetic field profile has the form of two barriers with opposite signs. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. From a numerical analysis based on a diffusive and a ballistic transport model, the mechanism of the asymmetric magnetoresistance effect can be understood in terms of the junction of positive and negative magnetic-field regions. This device can be a good candidate for a magnetoresistance-based device for high-density data storage and retrieval and for a spintronic device using a spin up/down junction. English KOREAN PHYSICAL SOC ELECTRON-TRANSPORT ROOM-TEMPERATURE FIELD 2D Asymmetric magnetoresistance in a double magnetic barrier device Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.4, pp.642 - 647 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 48 4 642 647 scie scopus kci ART001195512 000236863300023 2-s2.0-33646408157 Physics, Multidisciplinary Physics Article ELECTRON-TRANSPORT ROOM-TEMPERATURE FIELD 2D magnetoresistance 2DEG InAs Hall angle ballistic motion