Cho, NK Ryu, SP Song, JD Choi, WJ Lee, JI Jeon, H 2024-01-21T03:32:13Z 2024-01-21T03:32:13Z 2021-09-01 2006-03-27 0003-6951 https://pubs.kist.re.kr/handle/201004/135646 We strongly support Guryanov's speculation-that a thinner wetting layer is expected with quantum dots (QDs) grown by migration-enhanced epitaxy-with structural and optical measurements. InAs QDs grown by migration-enhanced molecular-beam epitaxy showed a larger size, lower density, similar to 40% enhanced uniformity, similar to 2 times larger aspect ratio, and a measurement temperature insensitivity of the photoluminescence linewidth compared to QDs grown by conventional molecular-beam epitaxy. The thickness of the wetting layer for the migration-enhanced epitaxial InAs QD (2.1 nm) was thinner than that of the counterpart (4.0 nm). (c) 2006 American Institute of Physics. English AMER INST PHYSICS LASERS LAYER Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy Article 10.1063/1.2189195 1 APPLIED PHYSICS LETTERS, v.88, no.13 APPLIED PHYSICS LETTERS 88 13 scie scopus 000236465100070 2-s2.0-33645553723 Physics, Applied Physics Article LASERS LAYER