Jung, M Mho, SI Park, HL 2024-01-21T03:32:16Z 2024-01-21T03:32:16Z 2021-09-01 2006-03-27 0003-6951 https://pubs.kist.re.kr/handle/201004/135647 Long-range-ordered CdTe nanodot arrays with controlled size and density were grown on GaAs substrates by using molecular-beam epitaxy with ultrathin nanoporous alumina masks. The CdTe/GaAs nanodot arrays were grown as replicas of the self-assembled porous alumina masks in spite of the large lattice mismatch between GaAs and CdTe. Using ultrathin alumina masks (ca. 200 nm in thickness), we fabricated CdTe nanodot arrays with uniform dot sizes in the ranges of 35 nm (with a density of similar to 2.5x10(10) cm(-2)) and 80 nm (with a density of similar to 8.1x10(9) cm(-2)). This is the report on controlling both the size and the density of II-VI/III-V heterostructure semiconductor nanodots. English AMER INST PHYSICS ANODIC POROUS ALUMINA BEAM EPITAXIAL-GROWTH QUANTUM-DOT ARRAYS GAAS FABRICATION Long-range-ordered CdTe/GaAs nanodot arrays grown as replicas of nanoporous alumina masks Article 10.1063/1.2191424 1 APPLIED PHYSICS LETTERS, v.88, no.13 APPLIED PHYSICS LETTERS 88 13 scie scopus 000236465100087 Physics, Applied Physics Article ANODIC POROUS ALUMINA BEAM EPITAXIAL-GROWTH QUANTUM-DOT ARRAYS GAAS FABRICATION CdTe/GaAs nanodot nanoporous alumina MBE