Kim, KB Yun, TS Lee, JC Kim, HS Kim, HG Kim, ID 2024-01-21T03:36:01Z 2024-01-21T03:36:01Z 2021-09-02 2006-03 0885-3010 https://pubs.kist.re.kr/handle/201004/135724 In this paper, a Ba0.6Sr0.4TiO3 (BST) tunable phase shifter with TiO2 films as microwave buffer layer between BST and silicon (Si) substrates is presented. The TiO2 buffer layer is grown by atomic layer deposition (ALD) onto Si substrate followed by pulsed laser deposition (PLD) of BST thin films onto the TiO2 buffer layer. The phase shifter fabricated on BST films grown on TiO2/Si substrate shows a good figure of merit (FOM) of 75.4 degrees/dB by exhibiting improved tunablity while retaining an appropriate dielectric Q as compared to 55.1 degrees/dB of BST/MgO structure. The TiO2 buffer layer grown by ALD enables successful integration of BST-based microwave tunable devices with high resistive Si wafer. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC THIN-FILMS TA2O5 Integration of coplanar (Ba,Sr)TiO3 microwave phase shifters onto Si wafers using TiO2 buffer layers Article 1 IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, v.53, no.3, pp.518 - 524 IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 53 3 518 524 scie scopus 000235784900002 Acoustics Engineering, Electrical & Electronic Acoustics Engineering Article THIN-FILMS TA2O5