Jung, YS Kononenko, OV Choi, WK 2024-01-21T03:36:27Z 2024-01-21T03:36:27Z 2021-09-02 2006-03 0038-1098 https://pubs.kist.re.kr/handle/201004/135733 High quality ZnO films were grown on c-plane sapphire substrate using low temperature ZnO buffer layer by plasma-assisted molecular beam epitaxy. The film deposited at 720 degrees C showed the lowest value of full-width at half maximum for the symmetric (0002) diffraction peak of about 86 arcsec. The highest electron mobility in the films was about 103-105 cm(2)/V s. From temperature-dependent Hall effect measurements, the mobility strongly depends on the dislocation density at low temperature region and the polar optical phonon scattering at high temperature, respectively. Moreover, by obtaining the activation energy of the shallow donors, it was supposed that hydrogen was source of n-type conductivity in as-grown ZnO films. (c) 2006 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD BUFFER LAYER THIN-FILMS DONOR PHOTOLUMINESCENCE C-AL2O3(0001) TEMPERATURE MECHANISMS MOBILITY Electron transport in high quality undoped ZnO film grown by plasma-assisted molecular beam epitaxy Article 10.1016/j.ssc.2005.12.038 1 SOLID STATE COMMUNICATIONS, v.137, no.9, pp.474 - 477 SOLID STATE COMMUNICATIONS 137 9 474 477 scie scopus 000236087900003 2-s2.0-32644490364 Physics, Condensed Matter Physics Article BUFFER LAYER THIN-FILMS DONOR PHOTOLUMINESCENCE C-AL2O3(0001) TEMPERATURE MECHANISMS MOBILITY zinc oxide molecular beam epitaxy dislocation hall measurement