Shin, JW Lee, JY Kim, TW No, YS Cho, WJ Choi, WK 2024-01-21T03:37:13Z 2024-01-21T03:37:13Z 2021-09-02 2006-02-27 0003-6951 https://pubs.kist.re.kr/handle/201004/135743 X-ray diffraction analysis reveals that the crystallinity of (0001)-oriented columnar grains in ZnO thin films grown on p-Si (100) substrates is enhanced with increasing growth temperature, and transmission electron microscopy confirms that the columnar structures become more stable at higher growth temperature. The morphological evolution of the columnar structure in ZnO thin films is described on the basis of experimental measurements. (c) 2006 American Institute of Physics. English AMER INST PHYSICS ROOM-TEMPERATURE ZNO FILMS SI EMISSION Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates Article 10.1063/1.2174829 1 APPLIED PHYSICS LETTERS, v.88, no.9 APPLIED PHYSICS LETTERS 88 9 scie scopus 000235736300035 2-s2.0-33644677755 Physics, Applied Physics Article ROOM-TEMPERATURE ZNO FILMS SI EMISSION ZnO columnar structure p-tyep Silicon substrates