Jeon, KA Kim, JH Shim, WY Lee, WY Jung, MH Lee, SY 2024-01-21T03:40:51Z 2024-01-21T03:40:51Z 2021-09-01 2006-01-18 0022-0248 https://pubs.kist.re.kr/handle/201004/135811 We report on ferromagnetic characteristics of Zn1-xMnxO thin films grown on Al2O3 substrates by using pulsed laser deposition. The effects of oxygen pressure on the ferromagnetism in the Mn-doped ZnO thin films are discussed. The carrier concentration was found to be controlled by varying the oxygen pressure. By decreasing oxygen pressure, the films exhibited increases in both the lattice constant and fundamental band gap energy. Large magneto resistance (MR) was observed in the film grown at 700 degrees C, especially over 10% in the positive MR. The results indicate the spin splitting caused by strong s-d exchange coupling between the conducting carriers and localized spins of Mn ions. (c) 2005 Published by Elsevier B.V. English ELSEVIER SCIENCE BV MN-DOPED ZNO SEMICONDUCTORS FERROMAGNETISM TRANSITION Magnetic and optical properties of Zn1-xMnxO thin films prepared by pulsed laser deposition Article 10.1016/j.jcrysgro.2005.10.044 1 JOURNAL OF CRYSTAL GROWTH, v.287, no.1, pp.66 - 69 JOURNAL OF CRYSTAL GROWTH 287 1 66 69 scie scopus 000234982100014 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article; Proceedings Paper MN-DOPED ZNO SEMICONDUCTORS FERROMAGNETISM TRANSITION physical vapor deposition processes zinc compounds magnetic materials