Seo, JH Park, JY Jung, SK Yoo, KH Whang, CN Kim, SS Choi, DS Chae, KH 2024-01-21T03:41:15Z 2024-01-21T03:41:15Z 2021-09-01 2006-01-09 0009-2614 https://pubs.kist.re.kr/handle/201004/135819 The atomic structure of the Al-induced clusters on Si(001) surface formed by the annealing of 0.5 ML Al/Si(001) at 500 degrees C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al-Si dimers has been oriented on the topmost layer of the Si(001) surface with a bonding length (Delta z) of 1.00 +/- 0.05 angstrom. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV ENERGY ION-SCATTERING 1ST PRINCIPLES ORDERED ARRAY X-1) SURFACE RECONSTRUCTION ADSORPTION SI(100) PHASE Atomic arrangement of Al-induced clusters on Si(001) surface at high temperature Article 10.1016/j.cplett.2005.10.010 1 CHEMICAL PHYSICS LETTERS, v.417, no.1-3, pp.72 - 77 CHEMICAL PHYSICS LETTERS 417 1-3 72 77 scie scopus 000234530400014 2-s2.0-29144513707 Chemistry, Physical Physics, Atomic, Molecular & Chemical Chemistry Physics Article ENERGY ION-SCATTERING 1ST PRINCIPLES ORDERED ARRAY X-1) SURFACE RECONSTRUCTION ADSORPTION SI(100) PHASE ion scattering Atomic structure Si(001) surface Al adatom