Roh, SJ Mane, RS Pathan, HA Joo, OS Han, SH 2024-01-21T04:01:09Z 2024-01-21T04:01:09Z 2021-09-02 2005-12-15 0169-4332 https://pubs.kist.re.kr/handle/201004/135884 Layer-by-layer (LbL) deposition of CUInS2 (CIS) thin films at room temperature (25 degrees C) from alkaline CUSO4 + In-2(SO4)(3) and Na2S precursor solutions was reported. The method allowed self-limited growth of CIS films with nanocrystalline structure and composed of densely packed nanometer-sized grains. The as-deposited CIS film was 250 nm thick and composed of closely packed particles of 20 - 30 nm in diameter. The alkaline cationic precursor solution was obtained by dissolving CuSO4 and InSO4 in deionized water with a appropriate amount of hydrazine monohydrate (H-H) and 2,2',2"-nitrilotriethanol (TEA). CIS films were annealed at 200 degrees C for 2 h and effect of annealing on structural, optical, and surface morphological properties was thoroughly investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV-vis spectrometer, C-V, and water contact angle techniques, respectively. (c) 2005 Published by Elsevier B.V. English ELSEVIER CHEMICAL-DEPOSITION SOLAR-CELLS PRECURSORS DISULFIDE ROUTE Rapid growth of nanocrystalline CuInS2 thin films in alkaline medium at room temperature Article 10.1016/j.apsusc.2005.02.140 1 APPLIED SURFACE SCIENCE, v.252, no.5, pp.1981 - 1987 APPLIED SURFACE SCIENCE 252 5 1981 1987 scie scopus 000233985900098 2-s2.0-27944498972 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article CHEMICAL-DEPOSITION SOLAR-CELLS PRECURSORS DISULFIDE ROUTE CuInS2 XRD SEM TEM UV-vis C-V water contact angle