Kim, H Shin, C Chang, J 2024-01-21T04:01:12Z 2024-01-21T04:01:12Z 2021-09-02 2005-12-15 0169-4332 https://pubs.kist.re.kr/handle/201004/135885 Ge self-assembled quantum dots (SAQDs) grown on a relaxed Si0.75Ge0.25 buffer layer were observed using an atomic force microscopy (AFM) and a transmission electron microscopy (TEM). The effect of buried misfit dislocations on the formation and the distribution of Ge SAQDs was extensively investigated. The Burgers vector determination of each buried dislocation using the g(.)b = 0 invisibility criterion with plane-view TEM micrographs shows that Ge SAQDs grow at specific positions related to the Burgers vectors of buried dislocations. The measurement of the lateral distance between a SAQD and the corresponding misfit dislocation with plane-view and cross-sectional TEM images reveals that SAQDs form at the intersections of the top surface with the slip planes of misfit dislocations. The stress field on the top surface due to misfit dislocations is computed, and it is found that the strain energy of the misfit dislocations provides the preferential formation sites for Ge SAQDs nucleation. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV DISLOCATION SI(001) SIZE LUMINESCENCE KINETICS Formation of Ge self-assembled quantum dots on a SixGe1-x buffer layer Article 10.1016/j.apsusc.2005.02.141 1 APPLIED SURFACE SCIENCE, v.252, no.5, pp.1476 - 1480 APPLIED SURFACE SCIENCE 252 5 1476 1480 scie scopus 000233985900035 2-s2.0-27944456092 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article DISLOCATION SI(001) SIZE LUMINESCENCE KINETICS Ge self-assembled quantum dots molecular beam epitaxy (MBE) transmission electron microscopy (TEM)