Kang, KT Lim, MH Kim, HG Choi, Y Tuller, HL Kim, ID Hong, JM 2024-01-21T04:01:24Z 2024-01-21T04:01:24Z 2021-09-02 2005-12-12 0003-6951 https://pubs.kist.re.kr/handle/201004/135889 In this letter, we report on the role of Mn doping in markedly reducing leakage currents in Ba0.6Sr0.4TiO3 (BST) high-K gate dielectrics utilized in organic thin film transistors (OTFTs) fabricated on plastic substrates. Undoped and 3% Mn-doped BST thin films, deposited by rf magnetron sputtering at room temperature on Pt/Ti/SiO2/Si substrates, exhibited relative dielectric constants of similar to 24-28. At an applied electric field of 250 kV/cm, the 3% Mn-doped BST films exhibited leakage current densities below 2x10(-8) A/cm(2) compared to the much higher value of 5x10(-4) A/cm(2) characteristic of undoped BST films. Pentacene based OTFTs using 3% Mn-doped BST gate dielectrics exhibited low voltage operation of < 10 V. This demonstrates the potential use of Mn-doped BST films as high-K gate dielectrics for stable and low operating voltage OTFTs. English AMER INST PHYSICS STATE Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate Article 10.1063/1.2139838 1 APPLIED PHYSICS LETTERS, v.87, no.24 APPLIED PHYSICS LETTERS 87 24 scie scopus 000233825900076 2-s2.0-28844463440 Physics, Applied Physics Article STATE