<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Y</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;ID</dcvalue>
<dcvalue element="contributor" qualifier="author">Tuller,&#x20;HL</dcvalue>
<dcvalue element="contributor" qualifier="author">Akinwande,&#x20;AI</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T04:04:49Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T04:04:49Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-02</dcvalue>
<dcvalue element="date" qualifier="issued">2005-12</dcvalue>
<dcvalue element="identifier" qualifier="issn">0018-9383</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;135954</dcvalue>
<dcvalue element="description" qualifier="abstract">Pentacene&#x20;organic&#x20;thin-film&#x20;transistors&#x20;(OTFTs)&#x20;have&#x20;demonstrated&#x20;the&#x20;highest&#x20;performance&#x20;among&#x20;TFTs&#x20;with&#x20;an&#x20;organic&#x20;semiconductor&#x20;channel.&#x20;High&#x20;operating&#x20;voltages&#x20;(20-100&#x20;V),&#x20;stemming&#x20;from&#x20;poor&#x20;capacitive&#x20;coupling&#x20;between&#x20;gate&#x20;electrode&#x20;and&#x20;channel,&#x20;are&#x20;a&#x20;major&#x20;limitation,&#x20;particularly&#x20;for&#x20;portable&#x20;battery-powered&#x20;device&#x20;applications.&#x20;OTFTs&#x20;fabricated&#x20;on&#x20;flexible&#x20;polymer&#x20;substrates,&#x20;often&#x20;characterized&#x20;by&#x20;rough&#x20;surfaces,&#x20;benefit&#x20;from&#x20;the&#x20;use&#x20;of&#x20;high-K&#x20;dielectrics&#x20;given&#x20;the&#x20;ability&#x20;to&#x20;accommodate&#x20;thicker&#x20;films&#x20;which&#x20;ensure&#x20;the&#x20;pinhole-free&#x20;and&#x20;good&#x20;coverage&#x20;without&#x20;need&#x20;to&#x20;increase&#x20;operating&#x20;voltage.&#x20;As&#x20;we&#x20;demonstrate,&#x20;pyrochlore&#x20;structured&#x20;thin&#x20;films&#x20;can&#x20;provide&#x20;the&#x20;requisite&#x20;high&#x20;dielectric&#x20;constant&#x20;coupled&#x20;with&#x20;excellent&#x20;leakage&#x20;current&#x20;characteristics,&#x20;while&#x20;remaining&#x20;compatible&#x20;with&#x20;the&#x20;processing&#x20;requirements&#x20;of&#x20;flexible&#x20;OTFTs.&#x20;The&#x20;introduction&#x20;of&#x20;an&#x20;extremely&#x20;thin&#x20;parylene&#x20;film&#x20;between&#x20;the&#x20;BZN&#x20;dielectric&#x20;and&#x20;the&#x20;pentacene&#x20;semiconductor&#x20;markedly&#x20;shifts&#x20;the&#x20;threshold&#x20;voltage,&#x20;making&#x20;it&#x20;possible&#x20;to&#x20;fabricate&#x20;both&#x20;enhancement&#x20;(E)&#x20;and&#x20;depletion&#x20;(D)&#x20;TFTs.&#x20;We&#x20;report&#x20;the&#x20;successful&#x20;fabrication&#x20;of&#x20;low-voltage&#x20;(&lt;&#x20;2&#x20;V)&#x20;organic&#x20;transistors&#x20;and&#x20;depletion-load&#x20;inverter&#x20;using&#x20;a&#x20;200-nm-thick&#x20;pyrochlore&#x20;gate&#x20;dielectric,&#x20;Bi1.5Zn1.0Nb1.5O7&#x20;(BZN),&#x20;prepared&#x20;by&#x20;a&#x20;room&#x20;temperature&#x20;process.&#x20;The&#x20;inverters&#x20;with&#x20;depletion&#x20;load&#x20;were&#x20;successfully&#x20;operated&#x20;under&#x20;5&#x20;V&#x20;with&#x20;excellent&#x20;noise&#x20;margin.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">IEEE-INST&#x20;ELECTRICAL&#x20;ELECTRONICS&#x20;ENGINEERS&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">THIN-FILM&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="none">MONOLAYERS</dcvalue>
<dcvalue element="subject" qualifier="none">TA2O5</dcvalue>
<dcvalue element="title" qualifier="none">Low-voltage&#x20;organic&#x20;transistors&#x20;and&#x20;depletion-load&#x20;inverters&#x20;with&#x20;high-K&#x20;pyrochlore&#x20;BZN&#x20;gate&#x20;dielectric&#x20;on&#x20;polymer&#x20;substrate</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;TED.2005.859594</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;ELECTRON&#x20;DEVICES,&#x20;v.52,&#x20;no.12,&#x20;pp.2819&#x20;-&#x20;2824</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;ELECTRON&#x20;DEVICES</dcvalue>
<dcvalue element="citation" qualifier="volume">52</dcvalue>
<dcvalue element="citation" qualifier="number">12</dcvalue>
<dcvalue element="citation" qualifier="startPage">2819</dcvalue>
<dcvalue element="citation" qualifier="endPage">2824</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000233682200042</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-29244445146</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">THIN-FILM&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MONOLAYERS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">TA2O5</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Bi1.5Zn1.0Nb1.5O7</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">high-K&#x20;dielectric</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">organic&#x20;thin-film&#x20;transistors&#x20;(OTFTs)</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">pentacene</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">pyrochlore</dcvalue>
</dublin_core>
