Woo, JT Kim, JH Kim, TW Song, JD Park, YJ 2024-01-21T04:09:12Z 2024-01-21T04:09:12Z 2021-09-02 2005-11 2469-9950 https://pubs.kist.re.kr/handle/201004/136035 The optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys with various compositions grown on InP substrates by using molecular-beam epitaxy were investigated through photoluminescence (PL) measurements and numerical calculations. The electronic subband energy states, the interband transition energies, and the exciton binding energies of (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys and corresponding In0.53Ga0.47As/In0.52Al0.48As single quantum wells were calculated by using a finite difference method, taking into account two band Hamiltonian system. The numerical results for interband transitions of (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys were in reasonable agreement with the excitonic transitions obtained from the PL measurements. English AMER PHYSICAL SOC ENERGIES WELLS Optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys Article 10.1103/PhysRevB.72.205320 1 PHYSICAL REVIEW B, v.72, no.20 PHYSICAL REVIEW B 72 20 scie scopus 000233603900073 2-s2.0-29744432090 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article ENERGIES WELLS