Kim, YT Park, JH 2024-01-21T04:09:28Z 2024-01-21T04:09:28Z 2021-09-02 2005-11 0031-8965 https://pubs.kist.re.kr/handle/201004/136040 W-C-N films have been deposited on a tetraethylorthosilicate (TEOS) interlayer dielectric with atomic layer deposition (ALD) cycles of WF6-N-2-CH4 gases and the exposure cycles of N-2 and CH are synchronized with a pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism, keep a constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles, and have fairly low resistivity (300 mu Omega cm). As a diffusion barrier for Cu interconnection the W-C-N films maintain the amorphous phase and no Cu interdiffusion occurs even at 800 degrees C for 30 min. English WILEY-V C H VERLAG GMBH NITRIDE DIFFUSION BARRIER GROWTH METALLIZATION TAN Pulse plasma assisted atomic layer deposition of W-C-N thin films for Cu interconnects Article 10.1002/pssa.200521296 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.202, no.14, pp.R164 - R166 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 14 R164 R166 scie scopus 000233693100007 2-s2.0-28644437856 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article NITRIDE DIFFUSION BARRIER GROWTH METALLIZATION TAN