Koo, HC Yi, HJ Song, JD Ko, JB Chang, J Han, SH 2024-01-21T04:12:35Z 2024-01-21T04:12:35Z 2021-09-03 2005-10 0018-9464 https://pubs.kist.re.kr/handle/201004/136099 A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AIAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system Article 10.1109/TMAG.2005.854798 1 IEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp.2589 - 2591 IEEE TRANSACTIONS ON MAGNETICS 41 10 2589 2591 scie scopus 000232679700011 2-s2.0-27744511537 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper AlAs aluminum oxide furnace low transmission barrier spin injection