Kim, SH Kim, JH Yu, BG Byun, Y Jeon, YM Lee, S Woo, DH Kim, SH 2024-01-21T04:14:57Z 2024-01-21T04:14:57Z 2021-09-03 2005-09-01 0013-5194 https://pubs.kist.re.kr/handle/201004/136142 By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is crossgain modulation. In the NAND gate (A (B) over bar +(A) over bar), Boolean A (B) over bar is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean A is obtained by using the clock signal as a probe beam and signal A as a pump beam in SOA-2. By adding the two outputs from SOA-1 and SOA-2, Boolean (A) over bar +A (B) over bar (logic NAND) can be acquired. The extinction ratio is about 6.1 dB. English INST ENGINEERING TECHNOLOGY-IET WAVELENGTH CONVERSION All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers Article 10.1049/el:20052320 1 ELECTRONICS LETTERS, v.41, no.18, pp.1027 - 1028 ELECTRONICS LETTERS 41 18 1027 1028 scie scopus 000232336800026 2-s2.0-25444480546 Engineering, Electrical & Electronic Engineering Article WAVELENGTH CONVERSION all-optical NAND cross-gain modulation