Yang, MK Kim, DY Park, JW Lee, JK 2024-01-21T04:30:57Z 2024-01-21T04:30:57Z 2022-01-11 2005-09 0374-4884 https://pubs.kist.re.kr/handle/201004/136147 Au/Cr-doped SrZrO3/SrRuO3 thin film structure was fabricated on SrTiO3 (100) substrates by using pulsed laser deposition (PLD). The Cr doped SrZrO3 thin films and SrRuO3 bottom electrodes were epitaxially grown along the (hh0/001) direction. We have studied their resistive switching behavior and memory effects for ReRAM applications. Reproducible insulator-conductor switching behavior was observed with an on/off resistance ratio of about 20. We could also observe that the I-V characteristic of the structure was not linear but diode-like. This agrees well with previous studies on Pr0.7Ca0.3MnO3, and implies that the Au/SrZrO3 : Cr interfaces play an important role in the resistive switching. English KOREAN PHYSICAL SOC Resistive switching behavior of Cr-doped SrZrO3 perovskite thin films for random access memory applications Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, pp.S313 - S316 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 47 S313 S316 scie scopus kci 000232374700019 2-s2.0-27444445063 Physics, Multidisciplinary Physics Article; Proceedings Paper SrZrO3 switching behavior memory effects